Texas Instruments (TI) has recently announced that they have broken ground on a new 300-mm fab in Lehi, Utah. This new facility, known as LFAB2, will be connected to the company's existing 300-mm wafer fab in Lehi. The groundbreaking ceremony was attended by Utah Governor Spencer Cox and TI CEO Haviv Ilan, who took the first steps towards the construction of the new facility.
The LFAB2 facility will be a state-of-the-art manufacturing plant that will produce advanced semiconductors for a variety of applications, including automotive, industrial, and personal electronics. The new facility will also create hundreds of new jobs in the area, providing a boost to the local economy.
TI has a long history of investing in the development of advanced semiconductor technologies, and the LFAB2 facility is just the latest example of the company's commitment to innovation and growth. With this new facility, TI will be able to expand its production capabilities and meet the growing demand for advanced semiconductors in a variety of industries.
Overall, the groundbreaking of the LFAB2 facility is an exciting development for TI, the state of Utah, and the semiconductor industry as a whole. With this new facility, TI will be well-positioned to continue its leadership in the development of advanced semiconductor technologies and drive innovation in a variety of industries for years to come.
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