30V N-Channel Common-Drain Dual Mosfet

SSM10N961L Drain Dual Mosfet

Toshiba has recently launched its first 30V n-channel common-drain dual mosfet, designed to control the bi-directional power flow in USB-connected devices. With the wide range of power levels (from 5V 3A to 48V 5A) supported by the USB Power Delivery standard, bi-directional power flow is essential in devices that require USB charging.

The development of the SSM10N961L, a 30V common drain mosfet, allows Toshiba to aim at rails frequently found in laptops and tablets, an area where they are already producing similar 12V dual mosfets for Li-ion battery packs.

The new part has a source-source (through both mosfets) on-resistance of 9.9mΩ and can handle up to 9A when mounted on an 18µm 407mm2 (~20mm square) copper pad. Additionally, the new mosfet can handle up to 14A on a 70µm 687.5mm2 (~26mm) pad. The resistance for this new part is with 10V on the gates and increases to 13.6mΩ (17.6mΩ max) at 4.5V.

To implement a load switch with a back-flow prevention or a power multiplexer, Toshiba has developed the TCK42xG family of dual gate driver ICs. Furthermore, they created a 20 x 20mm power multiplexer evaluation board ('RD221B Mux6') that switches 3A between 20V and 9V inputs and an output, with a choice of break-before-make and make-before-break operation.

Overall, this new product launch from Toshiba will provide reliable and efficient power control solutions for USB-connected devices, contributing to the growing demand for high-performance components in the electronics industry.