Especificações Técnicas do Produto
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Central Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 15 A |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 90 W |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | TO-66-2 |
| Collector- Base Voltage VCBO | 80 V |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Collector-Emitter Saturation Voltage | 2 V |
| Emitter- Base Voltage VEBO | 5 V |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 200 C |
| Gain Bandwidth Product FT | 4 MHz |
| Series | 2N6316 |
| Packaging | Tube |
| Part # Aliases | 2N6316 PBFREE |
| Brand | Central Semiconductor |
| Configuration | Single |
| DC Collector/Base Gain Hfe Min | 20 at 500 mA, 4 V |
| DC Current Gain HFE Max | 100 at 2.5 A, 4 V |
| Transistor Polarity | NPN |
| Technology | Si |
| Factory Pack Quantity | 30 |
| Subcategory | Transistors |
| Unit Weight | 0.206000 oz |
