Especificações Técnicas do Produto
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 3 A |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 500 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | SOT-323-3 |
| Collector- Base Voltage VCBO | 15 V |
| Collector- Emitter Voltage VCEO Max | 12 V |
| Collector-Emitter Saturation Voltage | 200 mV |
| Emitter- Base Voltage VEBO | 6 V |
| Length | 2.15 mm |
| Width | 1.3 mm |
| Height | 1 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product FT | 260 MHz |
| Series | 2DD2 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Single |
| DC Collector/Base Gain Hfe Min | 270 at 200 mA, 2 V |
| DC Current Gain HFE Max | 270 at 200 mA, 2 V |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Unit Weight | 0.000176 oz |
