2N7002W-7-F
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2N7002W-7-F , Diodes Incorporated

Fabricante: Diodes Incorporated
Número da peça do fornecedor: 2N7002W-7-F
Pacote: SOT-323-3
RoHS:
Ficha de dados:

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MOSFET 60V 200mW
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  • Quantidade Preço unitário
  • 10+ $0.01794
  • 50+ $0.01659
  • 200+ $0.01546
  • 600+ $0.01434
  • 1500+ $0.01344
  • 3000+ $0.01287

In Stock: 2732

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Quantidade Mínimo 10
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$0.1794

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Especificações Técnicas do Produto
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category MOSFET
RoHS
Type Enhancement Mode Field Effect Transistor
Product MOSFET Small Signal
Forward Transconductance - Min 80 mS
Rds On - Drain-Source Resistance 13.5 Ohms
Mounting Style SMD/SMT
Pd - Power Dissipation 200 mW
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SOT-323-3
Length 2.2 mm
Width 1.35 mm
Height 1 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series 2N7002W
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 10 V
Vgs Th - Gate-Source Threshold Voltage 1 V
Technology Si
Id - Continuous Drain Current 115 mA
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-Off Delay Time 11 ns
Typical Turn-On Delay Time 7 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Unit Weight 0.000988 oz
Referências cruzadas
739465
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=739465&N=
$
10 0.01794
50 0.01659
200 0.01546
600 0.01434
1500 0.01344
3000 0.01287