MC3016LSD-13
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MC3016LSD-13 , Diodes Incorporated

Fabricante: Diodes Incorporated
Número da peça do fornecedor: DMC3016LSD-13
Pacote: SO-8
RoHS:
Ficha de dados:

PDF For DMC3016LSD-13

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Descrição:
MOSFET 30V N & P Comp FET Enh 2.3Vgs 25nC 22nC
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  • Quantidade Preço unitário
  • 1+ $0.19467
  • 10+ $0.17970
  • 30+ $0.17670
  • 100+ $0.16772

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Especificações Técnicas do Produto
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 15 mOhms, 30 mOhms
Rise Time 16.5 ns, 17.1 ns
Fall Time 5.6 ns, 40.4 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 1.2 W
Product Type MOSFET
Number Of Channels 2 Channel
Package / Case SO-8
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series DMC3016
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Dual
Transistor Polarity N-Channel, P-Channel
Transistor Type 1 N-Channel, 1 P-Channel
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 2.3 V
Qg - Gate Charge 11.3 nC, 10.9 nC
Technology Si
Id - Continuous Drain Current 8.2 A, 6.2 A
Vds - Drain-Source Breakdown Voltage 30 V
Typical Turn-Off Delay Time 26.1 ns, 60.5 ns
Typical Turn-On Delay Time 4.8 ns, 9.7 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Unit Weight 0.002610 oz
Referências cruzadas
1215062
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=1215062&N=
$
1 0.19467
10 0.17970
30 0.17670
100 0.16772