BSP125H6327
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BSP125H6327 , Infineon Technologies

Fabricante: Infineon Technologies
Número da peça do fornecedor: BSP125H6327
Pacote: SOT-223
RoHS:
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MOSFET N Trench 600V 120mA 2.3V @ 94uA 45 Ω @ 120mA,10V SOT-223 RoHS
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  • Quantidade Preço unitário
  • 1+ $0.55296
  • 10+ $0.45810
  • 30+ $0.41076
  • 100+ $0.36468
  • 500+ $0.33570
  • 1000+ $0.32121

In Stock: 614

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$0.55296

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Especificações Técnicas do Produto
Product Attribute Attribute Value
Manufacturer Infineon Technologies
Continuous Drain Current (Id) @ 25°C 120mA
Power Dissipation-Max (Ta=25°C) 1.8W
Rds On - Drain-Source Resistance 45Ω @ 120mA,10V
Package / Case SOT-223
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 2.3V @ 94uA
Vds - Drain-Source Breakdown Voltage 600V
Referências cruzadas
4607928
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4607928&N=
$
1 0.55296
10 0.45810
30 0.41076
100 0.36468
500 0.33570
1000 0.32121