PA65R190CFDXKSA1
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PA65R190CFDXKSA1 , Infineon Technologies

Fabricante: Infineon Technologies
Número da peça do fornecedor: IPA65R190CFDXKSA1
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MOSFET N-CH 650V 17.5A TO220
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  • Quantidade Preço unitário
  • 1+ $4.55148
  • 10+ $4.02381
  • 30+ $3.70296
  • 100+ $3.43305

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Especificações Técnicas do Produto
Product Attribute Attribute Value
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-111
Drain To Source Voltage (Vdss) 650 V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 100 V
Power Dissipation (Max) 34W (Tc)
Fet Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Fet Feature -
Vgs(Th) (Max) @ Id 4.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-220-3 Full Pack
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Referências cruzadas
11951147
415
/category/Semiconductors/Discrete-Semiconductors_415?proid=11951147&N=
$
1 4.55148
10 4.02381
30 3.70296
100 3.43305