PL60R105P7AUMA1
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PL60R105P7AUMA1 , Infineon Technologies

Fabricante: Infineon Technologies
Número da peça do fornecedor: IPL60R105P7AUMA1
Pacote: VSON-4
RoHS:
Ficha de dados:

PDF For IPL60R105P7AUMA1

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Descrição:
MOSFET HIGH POWER_NEW
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  • Quantidade Preço unitário
  • 1+ $3.82878
  • 10+ $3.75498
  • 30+ $3.70665
  • 100+ $3.65697

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$3.82878

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Especificações Técnicas do Produto
Product Attribute Attribute Value
Manufacturer Infineon
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 85 mOhms
Rise Time 8 ns
Fall Time 5 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 137 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case VSON-4
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series CoolMOS P7
Packaging Cut Tape or Reel
Brand Infineon Technologies
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 45 nC
Technology Si
Id - Continuous Drain Current 33 A
Vds - Drain-Source Breakdown Voltage 600 V
Typical Turn-Off Delay Time 83 ns
Typical Turn-On Delay Time 15 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Referências cruzadas
713671
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=713671&N=
$
1 3.82878
10 3.75498
30 3.70665
100 3.65697