P2305LT1G
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P2305LT1G , Leshan Radio

Fabricante: Leshan Radio
Número da peça do fornecedor: LP2305LT1G
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RoHS:
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PDF For LP2305LT1G

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Descrição:
MOSFET P Trench 30V 4.2A 1.3V @ 250uA 70 mΩ @ 4.2A,10V SOT-23(SOT-23-3) RoHS
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  • Quantidade Preço unitário
  • 10+ $0.04275
  • 100+ $0.03429
  • 300+ $0.02997
  • 3000+ $0.02682
  • 6000+ $0.02430
  • 9000+ $0.02304

In Stock: 8200

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$0.4275

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Especificações Técnicas do Produto
Product Attribute Attribute Value
Manufacturer Leshan Radio
Continuous Drain Current (Id) @ 25°C 4.2A
Power Dissipation-Max (Ta=25°C) 1.4W
Rds On - Drain-Source Resistance 70mΩ @ 4.2A,10V
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 1.3V @ 250uA
Vds - Drain-Source Breakdown Voltage 30V
Referências cruzadas
4610964
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4610964&N=
$
10 0.04275
100 0.03429
300 0.02997
3000 0.02682
6000 0.02430
9000 0.02304