MJD45H11T4G
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MJD45H11T4G , ON Semiconductor

Fabricante: ON Semiconductor
Número da peça do fornecedor: MJD45H11T4G
Pacote: TO-252-3
RoHS:
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PDF For MJD45H11T4G

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Bipolar Transistors - BJT 8A 80V 20W PNP
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  • Quantidade Preço unitário
  • 20+ $0.45018
  • 100+ $0.34704
  • 1250+ $0.30062
  • 2500+ $0.28419

In Stock: 5082

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$9.0036

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Especificações Técnicas do Produto
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 8 A
Mounting Style SMD/SMT
Pd - Power Dissipation 20 W
Product Type BJTs - Bipolar Transistors
Package / Case TO-252-3
Collector- Base Voltage VCBO 5 V
Collector- Emitter Voltage VCEO Max 80 V
Collector-Emitter Saturation Voltage 1 V
Emitter- Base Voltage VEBO 5 V
Length 6.73 mm
Width 6.22 mm
Height 2.38 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Gain Bandwidth Product FT 90 MHz
Series MJD45H11
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Continuous Collector Current 8 A
DC Collector/Base Gain Hfe Min 60
Transistor Polarity PNP
Factory Pack Quantity 2500
Subcategory Transistors
Unit Weight 0.012381 oz
Referências cruzadas
728056
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=728056&N=
$
20 0.45018
100 0.34704
1250 0.30062
2500 0.28419