SIS412DN-T1-GE3
Payment:
Delivery:

SIS412DN-T1-GE3 , Vishay Intertech

Fabricante: Vishay Intertech
Número da peça do fornecedor: SIS412DN-T1-GE3
Pacote: PowerPAK 1212-8
RoHS:
Ficha de dados:

PDF For SIS412DN-T1-GE3

ECAD:
Descrição:
MOSFET N Trench 30V 12A 2.5V @ 250uA 24 mΩ @ 7.8A,10V PowerPAK 1212-8 RoHS
Tips: the prices and stock are available, please place order directly.
  • Quantidade Preço unitário
  • 5+ $0.15561
  • 50+ $0.12393
  • 150+ $0.11034
  • 500+ $0.09351
  • 3000+ $0.08595
  • 6000+ $0.08145

In Stock: 240

Ship Immediately
Quantidade Mínimo 5
COMPRAR
Total

$0.77805

  • Product Details
  • Shopping Guide
  • FAQs
Especificações Técnicas do Produto
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 12A
Power Dissipation-Max (Ta=25°C) 3.2W
Rds On - Drain-Source Resistance 24mΩ @ 7.8A,10V
Package / Case PowerPAK 1212-8
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 2.5V @ 250uA
Vds - Drain-Source Breakdown Voltage 30V
Referências cruzadas
4604423
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4604423&N=
$
5 0.15561
50 0.12393
150 0.11034
500 0.09351
3000 0.08595
6000 0.08145