Si2302CDS-T1-GE3
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Si2302CDS-T1-GE3 , Vishay Intertech

Fabricante: Vishay Intertech
Número da peça do fornecedor: Si2302CDS-T1-GE3
Pacote: SOT23-3
RoHS:
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PDF For Si2302CDS-T1-GE3

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Descrição:
MOSFET N Trench 20V 2.9A 850mV @ 250uA 57 mΩ @ 3.6A,4.5V SOT-23(SOT-23-3) RoHS
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  • Quantidade Preço unitário
  • 20+ $0.05089
  • 200+ $0.04764
  • 500+ $0.04440
  • 1000+ $0.04116
  • 3000+ $0.03954
  • 6000+ $0.03727

In Stock: 8216

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Especificações Técnicas do Produto
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 2.9A
Power Dissipation-Max (Ta=25°C) 710mW
Rds On - Drain-Source Resistance 57mΩ @ 3.6A,4.5V
Package / Case SOT23-3
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 850mV @ 250uA
Vds - Drain-Source Breakdown Voltage 20V
Referências cruzadas
4581789
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4581789&N=
$
20 0.05089
200 0.04764
500 0.04440
1000 0.04116
3000 0.03954
6000 0.03727