Si2309CDS-T1-GE3
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Si2309CDS-T1-GE3 , Vishay Intertech

Fabricante: Vishay Intertech
Número da peça do fornecedor: Si2309CDS-T1-GE3
Pacote: SOT23-3
RoHS:
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PDF For Si2309CDS-T1-GE3

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Descrição:
MOSFET P Trench 60V 1.6A 3V @ 250uA 345 mΩ @ 1.25A,10V SOT-23(SOT-23-3) RoHS
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  • Quantidade Preço unitário
  • 1+ $0.52749
  • 10+ $0.44595
  • 30+ $0.38808
  • 100+ $0.34074
  • 500+ $0.08946
  • 1000+ $0.08163

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Especificações Técnicas do Produto
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 1.6A
Power Dissipation-Max (Ta=25°C) 1W
Rds On - Drain-Source Resistance 345mΩ @ 1.25A,10V
Package / Case SOT23-3
Packaging Tape & Reel (TR)
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
Referências cruzadas
4581794
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4581794&N=
$
1 0.52749
10 0.44595
30 0.38808
100 0.34074
500 0.08946
1000 0.08163